Dr. Aramis Odysseus: Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes (2 Nanometer transistors are possible)

14 July, 2017

Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes (2 Nanometer transistors are possible)

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Material-Device-Circuit Co-optimization of 2D Material based FETs for Ultra-Scaled Technology Nodes (2 Nanometer transistors are possible)

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